Imbg120r060m1h datasheet
WitrynaDatasheet 5 of 17 v01_00 2024-03-09 AIMW120R080M1 CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3 Electrical Characteristics 3.1 Static characteristics Table 4 Static characteristics (at T vj = 25°C, unless otherwise specified) Parameter Symbol Conditions Value Unit min. typ. max. Drain-source on-state resistance2 R …
Imbg120r060m1h datasheet
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WitrynaInfineon Technologies. Manufacturer Product Number. IMBG120R060M1HXTMA1. Description. SICFET N-CH 1.2KV 36A TO263. Detailed Description. N-Channel 1200 … WitrynaFinal Datasheet Please read the Important Notice and Warnings at the end of this document 2.1 www.infineon.com page 1 of 17 2024-09-01 IMBG120R060M1H …
WitrynaCoolSiC??1200V SiC Trench MOSFETwith .XT interconnection technology, IMBG120R060M1H Datasheet, IMBG120R060M1H circuit, IMBG120R060M1H data … WitrynaFinal Datasheet 5 of 17 2.2 2024-12-11 IMBG120R045M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3 Electrical Characteristics 3.1 Static …
WitrynaCoolSiC??1200V SiC Trench MOSFET with .XT interconnection technology, IMBG120R140M1H Datasheet, IMBG120R140M1H circuit, IMBG120R140M1H data sheet : INFINEON, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other … WitrynaIMBG120R060M1H, SP004363744. Technisches Datenblatt: IMBG120R060M1HXTMA1 Datasheet Technische Dokumentation anzeigen. Produktsortimentsauswahl (CoolSiC) Alle Produkte dieses Sortiments anzeigen. Produktbeschreibung. Hinweise. Market demand for this product has caused an extension in leadtimes. Delivery dates may …
WitrynaBuy IMBG120R060M1HXTMA1 - Infineon - Silicon Carbide MOSFET, Single, N Channel, 36 A, 1.2 kV, 0.06 ohm, TO-263 (D2PAK). element14 offers special pricing, same day dispatch, fast delivery, wide inventory, datasheets & technical support.
WitrynaAbout Infineon Technologies AG. Infineon Technologies is a leading global semiconductor manufacturer that specializes in providing power management, … onshape cupWitrynaIMBG120R060M1HXTMA1 Infineon Technologies MOSFET SIC DISCRETE datasheet, inventory & pricing. Skip to Main Content. 080 42650000. Contact Mouser (Bangalore) 080 42650000 Feedback. Change Location English INR ₹ INR $ USD India. Please confirm your currency selection: Indian Rupee onshape curvatureWitrynaIMBG120R060M1H IMBG120R060M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features Very low switching losses Short circuit withstand time 3 µs Fully controllable dV/dt Benchmark gate threshold voltage, VGS(th) = 4.5V Robust against parasitic turn on, 0V turn-off gate voltage can be applied Robust body … iobit advanced systemcare 15 pro 評判Witryna10 kwi 2024 · 12.7 ns. Typical Turn-On Delay Time: 6 ns. Part # Aliases: IMZ120R060M1H SP001808370. Unit Weight: 0.211644 oz. Select at least one … onshape cvilleWitrynaInfineon Technologies. Manufacturer Product Number. IMBG120R060M1HXTMA1. Description. SICFET N-CH 1.2KV 36A TO263. Detailed Description. N-Channel 1200 V 36A (Tc) 181W (Tc) Surface Mount PG-TO263-7-12. Customer Reference. Datasheet. onshape cut viewWitrynaIMBG120R060M1H SP004363744 : Products found: To show similar products, select at least one checkbox. Select at least one checkbox above to show similar products in this category. ... Datasheet. IMBG120R060M1HXTMA1 Datasheet (PDF) Product Catalogs. Infineon's Latest Power and Sensing Guide (PDF) Selection Guide (PDF) ... onshape cross sectionWitrynaIMBG120R060M1H CoolSiC#8482; 1200 V SiC Trench MOSFET in TO-263-7 package. The CoolSiC#8482; 1200 V, 60 m#937; SiC MOSFET in a D2PAK-7L (TO-263-7) … onshape cut part in half